Visualizing ferromagnetic domain behavior of magnetic topological insulator thin films

25Citations
Citations of this article
55Readers
Mendeley users who have this article in their library.

Abstract

A systematic magnetic force microscopy (MFM) study of domain behavior in thin films of the magnetic topological insulator Sb1.89V0.11Te3 reveals that in the virgin domain state, after zero-field cooling, an equal population of up and down domains occurs. Interestingly, the cooling field dependence of MFM images demonstrates that a small cooling magnetic field (approximately 5-10 Oe) is sufficient to significantly polarize the film despite the coercive field (HC) for these films being on the order of a tesla at low temperature. By visualizing the magnetization reversal process around HC of V-doped Sb2Te3, we observed a typical domain behavior of a ferromagnet, i.e., domain nucleation and domain wall propagation. Our results provide direct evidence of ferromagnetic behavior of the magnetic topological insulator, a necessary condition for a robust quantum anomalous Hall effect.

Cite

CITATION STYLE

APA

Wang, W., Chang, C. Z., Moodera, J. S., & Wu, W. (2016). Visualizing ferromagnetic domain behavior of magnetic topological insulator thin films. Npj Quantum Materials, 1. https://doi.org/10.1038/npjquantmats.2016.23

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free