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Microscopic Structure Of The SiO2/Si Interface

  • Himpsel F
  • McFeely F
  • Taleb-Ibrahimi A
  • et al.
Springer US, (1988), 219-225
DOI: 10.1007/978-1-4899-0774-5_24
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Abstract

The bonding of Si atoms at the SiO 2 /Si interface is determined via high-resolution core-level spectroscopy with use of synchrotron radiation. All four oxidation states of Si are resolved, and their distribution is measured for Si(100) and Si(111) substrates. For oxides grown in pure ...

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Himpsel, F. J., McFeely, F. R., Taleb-Ibrahimi, A., Yarmoff, J. A., & Hollinger, G. (1988). Microscopic Structure Of The SiO2/Si Interface. In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface (pp. 219–225). Springer US. https://doi.org/10.1007/978-1-4899-0774-5_24

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