Precipitation phenomena and transient diffusion/activation during high concentration boron annealing

Höfler, A., Feudel, T., Liegmann, A., Strecker, N., Fichtner, W., Kataoka, Y., … Sasaki, N. (1995). Precipitation phenomena and transient diffusion/activation during high concentration boron annealing. In Simulation of Semiconductor Devices and Processes (pp. 448–451). Springer Vienna. https://doi.org/10.1007/978-3-7091-6619-2_108