Journal Article

The effect of dielectric constant on device mobilities of high-performance, flexible organic field effect transistors

Applied Physics Letters (2009) 94(26)
DOI: 10.1063/1.3168523
92Citations
Citations of this article
93Readers
Mendeley users who have this article in their library.
Get full text

Abstract

High-performance pentacene (μsat =6.3 cm2 /V s) and poly(3-hexylthiophene) (μsat =0.43 cm2 /V s) field effect transistors have been realized on flexible substrate with low operating voltage (

Cite

CITATION STYLE

APA

Tan, H. S., Mathews, N., Cahyadi, T., Zhu, F. R., & Mhaisalkar, S. G. (2009). The effect of dielectric constant on device mobilities of high-performance, flexible organic field effect transistors. Applied Physics Letters, 94(26). https://doi.org/10.1063/1.3168523

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free