Abstract
High-performance pentacene (μsat =6.3 cm2 /V s) and poly(3-hexylthiophene) (μsat =0.43 cm2 /V s) field effect transistors have been realized on flexible substrate with low operating voltage (
Cite
CITATION STYLE
APA
Tan, H. S., Mathews, N., Cahyadi, T., Zhu, F. R., & Mhaisalkar, S. G. (2009). The effect of dielectric constant on device mobilities of high-performance, flexible organic field effect transistors. Applied Physics Letters, 94(26). https://doi.org/10.1063/1.3168523
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