SiO x/SiN y multilayers for photovoltaic and photonic applications

Abstract

Microstructural, electrical, and optical properties of undoped and Nd 3+-doped SiOx/SiNy multilayers fabricated by reactive radio frequency magnetron co-sputtering have been investigated with regard to thermal treatment. This letter demonstrates the advantages of using SiN y as the alternating sublayer instead of SiO 2. A high density of silicon nanoclusters of the order 10 19 nc/cm 3 is achieved in the SiO x sublayers. Enhanced conductivity, emission, and absorption are attained at low thermal budget, which are promising for photovoltaic applications. Furthermore, the enhancement of Nd 3+ emission in these multilayers in comparison with the SiO x/SiO 2 counterparts offers promising future photonic applications. © 2012 Nalini et al.