Group III Nitrides

Abstract

Optical, electrical and mechanical properties of group III nitrides, including of AlN, GaN, InN and their ternary and quaternary compounds are discussed. The driving force for semiconductor nitrides is device applications for emitters and detectors in the visible and ultraviolet (UV) portions of the optical spectrum and high-power amplifiers. Further advances in electronic and optoelectronic devices, which are imperative, require better understanding and precise measurements of the mechanical, thermal, electrical and optical properties of nitride semiconductors. Information available in the literature regarding many of the physical properties of nitrides, especially AlN and InN, is still in the process of evolution, and naturally in the subject of some controversy. This is, in part, a consequence of measurements having been performed on samples of widely varying quality. When possible, these spurious discrepancies have been disregarded. For other materials, too few measurements are available to yield a consensus, in which case the available data are simply reported. The aim of this work is to present the latest available data obtained by various experimental observations and theoretical calculations.