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Diode Lasers for Free Space Optical Communications Based on InAsSb/InAsSbP Grown by LPE

  • Yin M
  • Krier A
  • Carrington P
  • et al.
Springer Netherlands, (2008), 69-72
DOI: 10.1007/978-1-4020-8425-6_17
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Yin, M., Krier, A., Carrington, P. J., Jones, R., & Krier, S. E. (2008). Diode Lasers for Free Space Optical Communications Based on InAsSb/InAsSbP Grown by LPE. In Narrow Gap Semiconductors 2007 (pp. 69–72). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8425-6_17

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