Abstract
In this paper, 35 W driver power amplifier was designed and simulated using GaN HEMT for L-band radar. GaN HEMT is used because it can provide high output power and high gain as compared to other semiconductor technologies. The 35 W output power is generated using CGHV40030 GaN HEMT which is sufficient to drive further stages of power amplifier. The driver amplifier is designed at 1.3 GHz of center frequency. This amplifier is designed in class AB and 60.5% of PAE is achieved.
Author supplied keywords
Cite
CITATION STYLE
Ratnaparkhi, V., & Hiwale, A. (2018). 35 W GaN solid-state driver power amplifier for L-band radar applications. In Advances in Intelligent Systems and Computing (Vol. 673, pp. 1–7). Springer Verlag. https://doi.org/10.1007/978-981-10-7245-1_1
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
