Study on the Performance of Superlattice-Like Thin Film V 2 O 5 /Sb in Phase Change Memory

Abstract

Compared with Sb film, V 2 O 5 /Sb superlattice-like thin film has better thermal stability ( T c ∼ 240 °C, T 10-year ∼ 172.9 °C). V 2 O 5 /Sb thin film is suppressed by the multiple interfaces and the grains become smaller. The vibrational peaks of Sb-Sb and V–O bonds are observed by Raman measurement. The interaction between the two crystal systems improves the stability of the V 2 O 5 /Sb membrane. The multilayer structures before and after crystallization were observed by transmission electron microscopy. The ultralow-power (2.25 × 10 −12 J) and ultrafast-speed (8 ns) has been achieved for V 2 O 5 (1 nm)/Sb(9 nm)-based phase change memory device.