Appearance of the p-channel performance of poly-Si TFTs with a metal S/D electrode using BLDA aiming for low-cost CMOS

Abstract

Proposed in this study and fabricated on a glass substrate without adopting impurity doping were p-channel polycrystalline silicon (Si) thin-film transistors (TFTs) with a metal source/drain (S/D) electrode. The amorphous 50-nm-thick Si films deposited on a glass substrate via plasma-enhanced chemical vapor deposition were polycrystallized using blue laser diode annealing. Gold (Au), a high-work-function metal, was evaporated for the S/D electrode directly onto the Si channel layer. As a result of the TFT formation, the typical Id–Vg characteristics of the p-channel TFT were successfully obtained. In addition, after hydrogenation at 200°C, the drain current drastically increased. The 14 cm2/Vs effective field effect hole mobility was deduced at the drain voltage of −1 V.