Coulomb oscillations in three-layer graphene nanostructures

Abstract

We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain contacts. Three lateral graphene gates are used to electrostatically tune the device. An individual three-layer graphene constriction has been investigated separately showing a transport gap near the charge neutrality point. The graphene tunneling barriers show a strongly nonmonotonic coupling as a function of gate voltage indicating the presence of localized states in the constrictions. We show Coulomb oscillations and Coulomb diamond measurements proving the functionality of the graphene SET. A charging energy of ≈0.6 meV is extracted. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.