Abstract
We present a parameter extraction technique for higher-order transport models for a 2D electron gas in ultra thin body SOI MOSFETs. To describe 2D carrier transport we have developed a self consistent Schrödinger-Poisson Subband Monte Carlo simulator. The method takes into account quantization effects and a non equilibrium distribution function of the carrier gas, which allows an accurate description of the parameter behavior for high electric fields. Finally the results are compared with the transport parameters of 3D bulk electrons and the influence of the channel thickness on the mobility is investigated.
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CITATION STYLE
Vasicek, M., Kamer, M., Ungersboeck, E., Wagner, M., Kosina, H., & Grasser, T. (2007). Modeling of macroscopic transport parameters in inversion layers. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 201–204). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_48
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