Measuring the multilayer silicon based microstructure using differential reflectance spectroscopy

Abstract

The yield of a large-area ultra-thin display panel depends on the realization of designed thickness of multilayer films of all pixels. Measuring the thicknesses of multilayer films of a single pixel is crucial to the accurate manufacture. However, the thinnest layer is reaching the sub-20nm level, and different layers feature remarkable divergence in thickness with similar optical constants. This turns to a key obstruction to the thickness characterization by optical spectroscopy. Based on the tiny differences in absorptivity, a fast method for measuring the film thickness in a single pixel is proposed which combines the layer number reducing model and micro-area differential reflectance spectroscopy. The lower layers can be considered as semi-infinite in the corresponding spectral range whose thickness is infinite in the fitting algorithm. Hence, the thickness of the upper layer is fitted in a simplified layer structure. For demonstration, a multilayer silicon microstructure in a single pixel, p-Si/a-Si/n-Si (10nm/950nm/50nm) on complex substrate, is measured. The light spot diameter is about 60 microns with measuring-time in 2 seconds. The measurement deviation is 3% compared by a commercial ellipsometer. To conclude, the proposed method realizes the layer number reduction for fitting multilayer thickness with large thickness difference and similar optical constants, which provides a powerful approach for multilayer microstructure characterizations.