Dilute Bismuthides on InP Substrates: From Materials to Devices

Abstract

Dilute bismuthides, achieved by incorporating a small amount of bismuth (Bi) into conventional III–V semiconductors, have drawn extensive attention as a class of novel material for various promising applications ranging from optoelectronics to thermoelectrics due to their interesting properties such as band gap reduction, strong spin–orbit coupling, relatively weak temperature sensitivity, etc. This chapter focuses on the study of dilute bismuthides on InP substrates: InGaBiAs and InPBi. MBE growth conditions, material morphology and properties (especially electrical and optical properties), and the related potential applications will be discussed, as will the band gap narrowing and the band anticrossing (BAC) model.