Abstract
InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate. © 2012 IEEE.
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CITATION STYLE
Fonseka, H. A., Tan, H. H., Kang, J. H., Paiman, S., Gao, Q., Parkinson, P., & Jagadish, C. (2012). Growth of InP nanowires on silicon using a thin buffer layer. In Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD (pp. 43–44). https://doi.org/10.1109/COMMAD.2012.6472351
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