Abstract
High reflectivity (>90%) distributed Bragg reflectors (DBR) have been successfully produced utilizing the AlGaN/AlN material system. We present reflectivity and XRD data of Ga-polar AlxGa1-xN/AlN Bragg reflectors grown on sapphire. High peak reflectivities between 54% (5.5 period mirror) and 97% (25.5 period mirror) combined with large reflectivity FWHM of 30 nm have been found. All reflectors have been designed by ex-situ spectroscopic ellipsometry (SE) data of respective reference samples. © 2002 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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CITATION STYLE
Fedler, F., Klausing, H., Hauenstein, R. J., Ponce, A., Molina, S. I., Semchinova, O., … Graul, J. (2002). High reflectivity AlGaN/AlN DBR mirrors grown by PA-MBE. In Physica Status Solidi C: Conferences (pp. 258–262). Wiley-VCH Verlag. https://doi.org/10.1002/pssc.200390037
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