We report here the graphoepitaxial alignment of a lamellar forming PS-b-PMMA block copolymer (BCP) for directed self-assembly using topographical patterns (simple line structures) of hydrogen silsesquioxane (HSQ). The system demonstrates the importance of the sidewall chemistry on translational alignment of BCP domains. A method was developed where a silicon substrate was precoated with a hydroxyl-terminated random copolymer brush of PS-r-PMMA prior to the HSQ feature formation process. The brush ordains the vertical (to the substrate plane) alignment of the BCP lamellar microdomains. Translational BCP alignment is a result of PMMA selectively wetting the HSQ. The formed BCP pattern was selectively etched to remove the PMMA domain allowing direct imaging and to demonstrate capability in forming an on-chip mask. © 2013 The Royal Society of Chemistry.
CITATION STYLE
Borah, D., Rassapa, S., Shaw, M. T., Hobbs, R. G., Petkov, N., Schmidt, M., … Morris, M. A. (2013). Directed self-assembly of PS-b-PMMA block copolymer using HSQ lines for translational alignment. Journal of Materials Chemistry C, 1(6), 1192–1196. https://doi.org/10.1039/c2tc00289b
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