Basic Properties of ZnO, GaN, and Related Materials

Abstract

Structural, elastic, and electronic properties of the group-III nitride and the group-II oxide semiconductors are introduced here with basic material parameters. These materials generally have uniaxial anisotropy due to the wurtzite-type crystal structure. The basic formulae on the elastic properties and the electronic structures characterized by the uniaxial anisotropy are presented in this chapter.