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Infrared Study of Oxygen Segregation at Structural Defects in Polycrystalline Silicon

  • Pivac B
  • Sassella A
  • Borghesi A
Springer Vienna, (1997), 485-487
DOI: 10.1007/978-3-7091-6840-0_116
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Abstract

The authors have studied O-and C-doped multi-cryst. Si samples. A significant part of the O incorporated into the samples was accumulated at extended structural defects and therefore could not be quantified. Also, O was accumulated in SiOx clusters, with x close to 1. This explains the changes in the IR spectrum of the samples after thermal annealing, related to the dissoln. of such clusters. [on SciFinder(R)]

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Pivac, B., Sassella, A., & Borghesi, A. (1997). Infrared Study of Oxygen Segregation at Structural Defects in Polycrystalline Silicon. In Progress in Fourier Transform Spectroscopy (pp. 485–487). Springer Vienna. https://doi.org/10.1007/978-3-7091-6840-0_116

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