Wear leveling for PCM using hot data identification

Abstract

Phase change memory (PCM) is the best candidate device among next generation random access memory technologies. PCM has a potential to replace Flash memory due to non-volatility and in-place programmability, and low power consumption. Even though lifetime of PCM is longer than flash memory, wear leveling is needed because of non-uniformity of storage workload or malicious attack. In this paper, we propose a novel wear leveling algorithm for PCM as storage. Proposed algorithm extended the lifetime maximum 16 times and average 14 times in comparison to Segment Swapping algorithm.