1/f Noise in MOSTs: Faster is Noisier

Abstract

Circuit-simulation-oriented equations (SPICE and BSIM3) for the 1/f noise are discussed and their fitting parameters are translated in the 1/f noise parameter alpha. The effect of scaling down on the 1/f noise is studied in the ohmic region as well as in saturation and sub-threshold. A prospective for scaling down is given for channel length L < 0.12 mum where velocity saturation becomes dominant. A relation is proposed between the 1/f noise corner frequency f(c), where the 1/f noise is equal to the thermal noise, and the unit current gain frequency f(l). Faster devices (with higher f(T)) are inherently noisier considering f(c). Approximately holds, 10(-4) f(T) < f(c) < 10(-3) f(T). PU - SPRINGER PI - DORDRECHT PA - PO BOX 17, 3300 AA DORDRECHT, NETHERLANDS