Growth technology and characterization of bulk crystalline gallium oxide

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Abstract

In this paper, we study the process of growth from the melt by Chokhralsky method of bulk β-Ga2O3 crystals. The effect of different configurations of growth zones and ambient composition on resulting bulk crystal quality has been evaluated. It is shown that the vertical gradient has a great influence on the quality of the growing crystal and the stability of growth. The optical properties of obtained β-Ga2O3 crystals were investigated. The crystallographic orientation of crystal faces and the structural quality of the samples were studied with the use of XRD.

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Panov, D. I., Spiridonov, V. A., Zakgeim, D. A., Kremleva, A. V., Bauman, D. A., Romanov, A. E., & Bougrov, V. E. (2020). Growth technology and characterization of bulk crystalline gallium oxide. In Journal of Physics: Conference Series (Vol. 1695). IOP Publishing Ltd. https://doi.org/10.1088/1742-6596/1695/1/012024

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