In this paper, we study the process of growth from the melt by Chokhralsky method of bulk β-Ga2O3 crystals. The effect of different configurations of growth zones and ambient composition on resulting bulk crystal quality has been evaluated. It is shown that the vertical gradient has a great influence on the quality of the growing crystal and the stability of growth. The optical properties of obtained β-Ga2O3 crystals were investigated. The crystallographic orientation of crystal faces and the structural quality of the samples were studied with the use of XRD.
CITATION STYLE
Panov, D. I., Spiridonov, V. A., Zakgeim, D. A., Kremleva, A. V., Bauman, D. A., Romanov, A. E., & Bougrov, V. E. (2020). Growth technology and characterization of bulk crystalline gallium oxide. In Journal of Physics: Conference Series (Vol. 1695). IOP Publishing Ltd. https://doi.org/10.1088/1742-6596/1695/1/012024
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