Here we report the synthesis of a bulk oxide diluted magnetic semiconductor (DMS) system La1-xSrxCu0.925Mn 0.075SO (x = 0, 0.025, 0.05, 0.075, and 0.1). As a wide band gap p-type oxide semiconductor, LaCuSO satisfies all the conditions forecasted theoretically to be a room temperature DMS. The Curie temperature (T C) is around 200 K as x ≥ 0.05, which is among the highest T C record of known bulk DMS materials up to now. The system provides a rare example of oxide DMS system with p-type conduction, which is important for formation of high temperature spintronic devices. © 2013 Author(s).
Yang, X., Li, Y., Shen, C., Si, B., Sun, Y., Tao, Q., … Zhang, F. (2013). Sr and Mn co-doped LaCuSO: A wide band gap oxide diluted magnetic semiconductor with TC around 200 K. Applied Physics Letters, 103(2). https://doi.org/10.1063/1.4813540