Simulation of the tunnelling transport in ferromagnetic GaAs/ZnO heterojunctions

Abstract

In this work we have implemented a numerical simulator and analytical model to study the dependence of the tunnelling current on the polarization ratio of the carrier spin for a degenerate and ferromagnetic heterojunction. We have applied these models to study the behaviour of a magnetically doped GaAs/ZnO PN junction and the current transport in a PN heterojunction where the polarization of the spin of the charge carriers is also a control variable. © 2010 IOP Publishing Ltd.