This paper deals with the compact modeling of several emerging technologies: first, the double-gate MOSFET (DG MOSFET), and second, the carbon nanotube field-effect transistor (CNTFET). For CNTFETs, we propose two compact models, the first one with a classical behavior (like MOSFET), and the second one with an ambipolar behavior (Schottky-barrier CNTFET). All the models have been compared with numerical simulations and then implemented in VHDL-AMS.
CITATION STYLE
Prégaldiny, F., Lallement, C., Diagne, B., Sallese, J.-M., & Krummenacher, F. (2007). Compact Modeling of Emerging Technologies with VHDL-AMS. In Advances in Design and Specification Languages for Embedded Systems (pp. 5–21). Springer Netherlands. https://doi.org/10.1007/978-1-4020-6149-3_1
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