Terahertz strong-field physics in light-emitting diodes for terahertz detection and imaging

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Abstract

Intense terahertz (THz) electromagnetic fields have been utilized to reveal a variety of extremely nonlinear optical effects in many materials through nonperturbative driving of elementary and collective excitations. However, such nonlinear photoresponses have not yet been obeserved in light-emitting diodes (LEDs), let alone employing them as fast, cost-effective, compact, and room-temperature-operating THz detectors and cameras. Here, we report ubiquitously available LEDs exhibiting photovoltaic signals of ~0.8 V and ~2 ns response time with signal-to-noise ratios of ~1300 when being illuminated by THz field strengths ~240 kV/cm. We also demonstrated THz-LED detectors and camera prototypes. These unorthodox THz detectors exhibited high responsivities (>1 kV/W) with response time four orders of magnitude shorter than those of pyroelectric detectors. The mechanism was attributed to THz-field-induced impact ionization and Schottky contact. These findings not only help deepen our understanding of strong THz field-matter interactions but also contribute to the applications of strong-field THz diagnosis.

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Ouyang, C., Li, S., Ma, J., Zhang, B., Wu, X., Ren, W., … Li, Y. (2021). Terahertz strong-field physics in light-emitting diodes for terahertz detection and imaging. Communications Physics, 4(1). https://doi.org/10.1038/s42005-020-00508-w

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