In this paper, a high-frequency differential ring dual-delay voltage-controlled oscillator (DR-VCO) is proposed. This 9 GHz DR-VCO is designed using 45 nm CNTFET technology. CNTFET is faster than MOSFET, and hence it provides a high tuning range. VCO with four-delay cells is designed in this work. This design consists of four-stage delay cells, and every delay cell is designed on dual-delay path topology. This topology results in high-output oscillation frequency which includes the range from 3 to 9 GHz. The observed phase noise at offset of 1 MHz frequency is −66 dBc/Hz.
CITATION STYLE
Kumar, Y., Raman, A., Ranjan, R., & Sarin, R. K. (2020). High-Frequency CNTFET-Based Voltage-Controlled Oscillator for PLL Application. In Lecture Notes in Networks and Systems (Vol. 106, pp. 413–419). Springer. https://doi.org/10.1007/978-981-15-2329-8_42
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