Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations

Abstract

Metal induced nucleation is adopted to achieve the growth of transition metal dichalcogenides at controlled locations. Ordered arrays of MoS 2 and WS 2 have successfully been fabricated on SiO 2 substrates by using the patterned Pt/Ti dots as the nucleation sites. Uniform MoS 2 monolayers with the adjustable size up to 50 μm are grown surrounding these metal patterns and the mobility of such layer is about 0.86 cm 2 /V·s. The crystalline flakes of WS 2 are also fabricated extending from the metal patterns and the electron mobility of these flakes is up to 11.36 cm 2 /V·s.