Abstract
The ammonothermal technique for the crystal growth of bulk GaN is presented. General aspects are discussed and the use of acidic mineralizer is focused on. This method is a recent development to challenge the problem of lattice-matched substrate crystal for future group-III nitride device technology. Chemical and physical properties are discussed and an outlook to the future prospective and technological requirements is given.
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APA
Ehrentraut, D., & Kagamitani, Y. (2010). Acidic Ammonothermal Growth Technology for GaN. In Springer Series in Materials Science (Vol. 133, pp. 183–203). Springer Verlag. https://doi.org/10.1007/978-3-642-04830-2_9
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