High performance drain engineered InGaN heterostructure tunnel field effect transistor

Abstract

A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel interface in the drain regions, and increase the tunneling barrier for the flow of holes from the conduction band of the drain to the valence band of the channel region under negative gate bias for n-TFET, which induces the ambipolar current being reduced from 1.93 × 10-8 to 1.46 × 10-11 A/μm. In addition, polar InGaN heterostructure TFET having a polarization effect can adjust the energy band structure and achieve steep interband tunneling. The average subthreshold swing of the polar drain engineered heterostructure TFET (DE-HTFET) is reduced by 53.3% compared to that of the nonpolar DE-HTFET. Furthermore, ION increases 100% from 137 mA/mm of nonpolar DE-HTFET to 274 mA/mm of polar DE-HTFET.