Abstract
In this study we successfully bonded silicon wafer substrates with metal based thermocompression technology. This technology has the advantage of inherent possibility of hermetic sealing and electrical contact. We used three different kinds of metals: gold, copper and aluminum. We will show the hermeticity, bonding strength and reliability of the different processes and compare the results. © 2011 IEEE.
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CITATION STYLE
Froemel, J., Baum, M., Wiemer, M., Roscher, F., Haubold, M., Jia, C., & Gessner, T. (2011). Investigations of thermocompression bonding with thin metal layers. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS’11 (pp. 990–993). https://doi.org/10.1109/TRANSDUCERS.2011.5969495
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