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Focal Plane Imaging Arrays Based on GaAs/AlGaAs Quantum Well Infrared Photodetectors

  • Liu H
  • Buchanan M
  • Li J
  • et al.
Springer US, (1997), 311-318
DOI: 10.1007/978-1-4757-9250-8_51
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Abstract

We summarize our world on the development of focal plane imaging arrays based on GaAs/AlGaAs quantum well infrared photodetectors. The infrared of interest here is from 3 to 12 mu m in wavelength, and detection is based on intersubband excitation of electrons in GaAs/AlGsAs quantum wells and the subsequent photocarrier transport resulting in photoconductivity.

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APA

Liu, H. C., Buchanan, M., Li, J., Wasilewski, Z. R., Wilson, P. H., Marshall, P. A., … Stapledon, J. (1997). Focal Plane Imaging Arrays Based on GaAs/AlGaAs Quantum Well Infrared Photodetectors. In Applications of Photonic Technology 2 (pp. 311–318). Springer US. https://doi.org/10.1007/978-1-4757-9250-8_51

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