Charge injection transistors and logic elements have been successfully implemented in a Si/Si0.7Ge0.3 heterostructure grown by rapid thermal epitaxy on a Si substrate. Shallow p+ source and drain ohmic contacts are obtained by a boron diffusion from a selectively deposited boron doped Ge layer. Room temperature operation of the charge injection transistor is demonstrated for the first time. High frequency measurements indicate a short circuit current gain cutoff frequency of 6 GHz.
CITATION STYLE
Mastrapasqua, M., King, C. A., Smith, P. R., & Pinto, M. R. (1994). Charge injection transistors and logic elements in Si/Si1-xGex heterostructures. In Technical Digest - International Electron Devices Meeting (pp. 385–388). IEEE. https://doi.org/10.1007/978-94-009-1746-0_34
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