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Model of mode-locked quantum-well semiconductor laser based on InGaAs/InGaAlAs/InP heterostructure

Journal of Physics: Conference Series (2016) 741(1)
DOI: 10.1088/1742-6596/741/1/012079
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Abstract

We propose a model for operation of mode-locked (ML) quantum-well semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model. Numerical simulations performed for the InGaAs/InGaAlAs laser structure emitting at 1,55 um.

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Rybalko, D. A., Polukhin, I. S., Solov’Ev, Y. V., Mikhailovskiy, G. A., Odnoblyudov, M. A., Gubenko, A. E., … Bougrov, V. E. (2016). Model of mode-locked quantum-well semiconductor laser based on InGaAs/InGaAlAs/InP heterostructure. In Journal of Physics: Conference Series (Vol. 741). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/741/1/012079

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