Wettability Behavior of Si/C and Si–Sn Alloy/C System

Abstract

During the Si growth process in the zone melting directional solidification experiment, the wettability behavior of Si source/solvent metal and solvent metal/seed substrate is an important issue for Si purification and growth. In this work, the wettability behavior of Si/C and Si-90 wt% Sn alloy/C system was studied by using the sessile drop method. The results show that Si and Si–Sn alloy wet C substrate, and the wettability gradually improves with the holding time due to the generation of a SiC layer in the metal/C interface and the infiltration Si or Si–Sn alloy into C substrate. Moreover, the addition of Sn into Si melt is beneficial for Si to wet C substrate, because Sn hinders the generation of SiC and Si promotes Sn wetting C substrate.