Abstract
We propose a homogeneous nanoscaled (∅ 250 nm) bilayered Pr0.7Ca0.3MnO3 (PCMO)-based memory device that exhibits low power and good memristive switching behavior. Accurate control of the oxygen-deficient (PCMO3-x) layer thickness promotes oxygen migration between PCMO3-x and stoichiometric PCMO (PCMO3). The bilayered PCMO structure was confirmed by X-ray photoelectron spectroscopy analysis. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Park, S., Jung, S., Siddik, M., Jo, M., Lee, J., Park, J., … Hwang, H. (2011). Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer. Physica Status Solidi - Rapid Research Letters, 5(10–11), 409–411. https://doi.org/10.1002/pssr.201105317
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