Fabrication and thermoelectric properties of chromium silicide thin films

Abstract

Thermoelectric thin films are candidate materials that can be used to supply the energy harvested to autonomously power Internet of Things (IoT) sensors and devices. This work deals with the fabrication of chromium silicide thin films and the characterization of their thermoelectric properties. The films were grown by utilizing a high-temperature molecular beam epitaxy (MBE) apparatus under different conditions. The highest power factor of more than 0.6 mW/m K2 was obtained for the chromium silicide film deposited at a temperature of 900 °C. The thermal conductivity of the thin film was observed to be approximately one-third that of bulk CrSi2