GaInNAs(Sb) long-wavelength VCSELs

Abstract

The push to provide high-speed optical network access directly to the end user is creating both significant pressure for the development of low-cost, high-speed access terminals as well as opportunities for development of entirely new technological approaches compared to those now used in the optical backbone networks. One of the most challenging is that of providing low-cost, long wavelength, single mode lasers that can be directly modulated at 10 Gbit/s, operate un-cooled in ambient environments and are easily packaged and coupled to fiber. Long wavelength vertical cavity surface emitting lasers (VCSELs) on GaAs certainly have the potential to meet these challenges. The development of MBE growth of GaInNAsSb on GaAs, issues of VCSEL design and successful demonstration of low threshold edge emitting lasers and the first 1530 nm monolithic VCSELs in GaInNAsSb on GaAs are described. © 2013 Springer-Verlag Berlin Heidelberg.