Abstract
Supercomputer simulations of molecular beam epitaxial growth are applied to modeling processing profiles. Illustration is provided by investigating the relative advantages of high incident beam flux growth, interrupted periodically to allow the growth front to relax, versus continual growth at a relatively low deposition rate.
Cite
CITATION STYLE
APA
Clarke, S., & Vvedensky, D. D. (1987). Epitaxial growth quality optimization by supercomputer. Applied Physics Letters, 51(5), 340–342. https://doi.org/10.1063/1.98434
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