Abstract
A novel practical optoelectronic network analyzer with over 300-GHz bandwidth was developed and was successfully used to measure over 100-GHz HEMT S-parameters.
Cite
CITATION STYLE
APA
Sahri, N., Nagatsuma, T., Otsuji, T., Shimizu, N., & Yaita, M. (1998). Characterization of > 300 GHz transistors using a novel optoelectronic network analyzer. Springer Series in Chemical Physics, 63, 194–196. https://doi.org/10.1007/978-3-642-72289-9_58
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
Already have an account? Sign in
Sign up for free