Abstract
Recent results in IC design have demonstrated the possibility to realize CMOS circuits working in the 100 GHz-1 THz band. In this chapter the design and measurements of a CMOS nonlinear transmission line and a CMOS Schottky diode sampling bridge are presented. Large-signal measurements of the nonlinear transmission lines from 6 to 168 GHz are shown. Time-domain measurements showing the possibility to sample ultrafast signals with fall time of 4.6 ps are described too. These two extremely wide band devices will be used as essential building blocks for the future implementation of a CMOS-based coherent THz spectrometer and imager. © 2012 Springer Science+Business Media B.V.
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CITATION STYLE
Tripodi, L., Matters-Kammerer, M. K., Van Goor, D., Hu, X., & Rydberg, A. (2012). Extremely wideband CMOS circuits for future THz applications. In Analog Circuit Design - Low Voltage Low Power; Short Range Wireless Front-Ends; Power Management and DC-DC, AACD 2011 (pp. 237–255). Kluwer Academic Publishers. https://doi.org/10.1007/978-94-007-1926-2_12
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