Recent developments on mnn for spintronic applications

Abstract

There is significant interest worldwide to identify new antiferromagnetic materials suitable for device applications. Key requirements for such materials are: relatively high magnetocrystalline anisotropy constant, low cost, high corrosion resistance and the ability to induce a large exchange bias, i.e., loop shift, when grown adjacent to a ferromagnetic layer. In this article, a review of recent developments on the novel antiferromagnetic material MnN is presented. This material shows potential as a replacement for the commonly used antiferromagnet of choice, i.e., IrMn. Although the results so far look promising, further work is required for the optimization of this material.