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Indium diffusion through high-k dielectrics in high-k/InP stacks

Applied Physics Letters (2013) 103(6)
DOI: 10.1063/1.4817932
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Abstract

Evidence of indium diffusion through high-k dielectric (Al 2O3 and HfO2) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a POx rich interface. © 2013 AIP Publishing LLC.

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Dong, H., Cabrera, W., Galatage, R. V., Santosh, K., Brennan, B., Qin, X., … Wallace, R. M. (2013). Indium diffusion through high-k dielectrics in high-k/InP stacks. Applied Physics Letters, 103(6). https://doi.org/10.1063/1.4817932

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