Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy

Abstract

Positron annihilation spectroscopy is an experimental technique that allows for the selective detection of vacancy defects in semiconductors, providing a means to both identify and quantify them. This chapter first gives a short introduction to positron annihilation techniques, and then proceeds to present an overview of the positron studies of vacancy defects and impurities in bulk and quasi-bulk GaN. Both the in-grown and processing induced defects are addressed.