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Book Chapter

GaN-Based Nanowire Transistors

  • Matioli E
  • Lu B
  • Piedra D
  • et al.
DOI: 10.1007/978-3-319-43199-4_6
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Abstract

The outstanding electronic properties of GaN semiconductors, such as large breakdown voltage, high critical electric field, high electron mobility and saturation velocity, high-temperature operation, make them an ideal material for power switches, converters, and RF power amplifiers.

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Matioli, E., Lu, B., Piedra, D., & Palacios, T. (2017). GaN-Based Nanowire Transistors (pp. 123–144). https://doi.org/10.1007/978-3-319-43199-4_6

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