We demonstrate ZnO nanowire based UV sensor by laser-induced hydrothermal growth of ZnO nanowire. By inducing a localized temperature rise using focused laser, ZnO nanowire array at 15 m size consists of individual nanowires with 8 m length and 200400 nm diameter is readily synthesized on gold electrode within 30 min at the desired position. The laser-induced growth process is consecutively applied on two different points to bridge the micron gap between the electrodes. The resultant photoconductive ZnO NW interconnections display 23 orders increase in the current upon the UV exposure at a fixed voltage bias. It is also confirmed that the amount of photocurrent can be easily adjusted by changing the number of ZnO NW array junctions. The device exhibits clear response to the repeated UV illumination, suggesting that this process can be usefully applied for the facile fabrication of low-cost UV sensor array. © 2013 Sukjoon Hong et al.
CITATION STYLE
Hong, S., Yeo, J., Manorotkul, W., Kim, G., Kwon, J., An, K., & Ko, S. H. (2013). Low-temperature rapid fabrication of ZnO nanowire UV sensor array by laser-induced local hydrothermal growth. Journal of Nanomaterials, 2013. https://doi.org/10.1155/2013/246328
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