Long-Wavelength Buried-Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers

Abstract

High-performance InP-based Vertical-Cavity Surface-Emitting Lasers for the 1.45–1.85 μm wavelength range have been fabricatedapplying the buried-tunnel-junction structure on the InGaAlAs-InP material system. With this technique very small thermaland electrical resistances can be achieved enabling the continuous-wave operation up to 90° C. Record stationary parametershave been demonstrated, such as sub-mA threshold currents, low electrical resistances of 30–60 Ω for 5–10 μm diameter, 0.9V threshold voltage at 1.55 μm wavelength and stably polarized single-mode operation with side-mode suppression of the orderof 50 dB.