4H-SiC PIN-type Semiconductor Detector for Fast Neutron Detection

Abstract

Radiation detectors based on semiconductors like Silicon Carbide (SiC), Aluminum Nitride (AlN), Boron Nitride (BN) and Gallium Arsenide (GaAs) with a large energy band gap are the most promising ionizing radiation detectors for high temperature and in harsh radiation fields. The present work focused on the development of a radiation resistive neutron semiconductor detector based on a wide band-gap 4H-SiC semiconductor, operating at a zero biased voltage by using a strong internal electric field. The self-biased detector structure was a PIN device, which was fabricated in KAERI based on the wafer provided by Cree Co.. The device was structured as 4 layers, which FRQVLVWHG RI ȝP RI P-OD\HU ȝP RI I-OD\HU ȝP RI N-layer on N-W\SH VXEVWUDWH ZLWK ȝP LQ WKLFNQHVV Neutron detection responses were measured up to a 1.1 x 10 6 n/sec-cm 2 by using an Am-Be neutron source at a self-powered operation. The absolute neutron detection efficiency was determined as 5.1x10 -4 at a 5.0 MeV in neutron energy.