Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

48Citations
Citations of this article
48Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

In analogy to all-electric spintronics, all-electric valleytronics, i.e., valley manipulation via electric means, becomes an exciting new frontier as it may bring revolutions in the field of data storage with ultra-high speed and ultra-low power consumption. The existence of the anomalous valley Hall effect in ferrovalley materials demonstrates the possibility of electrical detection for valley polarization. However, in previously proposed valley-polarized monolayers, the anomalous valley Hall effect is controlled by external magnetic fields. Here, through elaborate structural design, we propose the antiferrovally bilayer as an ideal candidate for realizing all-electric valleytronic devices. Using the minimal k·p model, we show that the energy degeneracy between valley indexes in such system can be lifted by electric approaches. Subsequently, the anomalous valley Hall effect strongly depends on the electric field as well. Taking the bilayer VSe2 as an example, all-electric tuning and detecting of anomalous valley Hall effect is confirmed by density-functional theory calculations, indicating that the valley information in such antiferrovalley bilayer can be reversed by an electric field perpendicular to the plane of the system and easily probed through the sign of the Hall voltage.

References Powered by Scopus

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set

61414Citations
N/AReaders
Get full text

Electric field in atomically thin carbon films

60385Citations
N/AReaders
Get full text

Semiempirical GGA-type density functional constructed with a long-range dispersion correction

25946Citations
N/AReaders
Get full text

Cited by Powered by Scopus

Valleytronics in transition metal dichalcogenides materials

199Citations
N/AReaders
Get full text

Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors

194Citations
N/AReaders
Get full text

Magnetoelectricity in multiferroics: A theoretical perspective

173Citations
N/AReaders
Get full text

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Cite

CITATION STYLE

APA

Tong, W. Y., & Duan, C. G. (2017). Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers. Npj Quantum Materials, 2(1). https://doi.org/10.1038/s41535-017-0051-6

Readers' Seniority

Tooltip

PhD / Post grad / Masters / Doc 17

57%

Professor / Associate Prof. 9

30%

Researcher 3

10%

Lecturer / Post doc 1

3%

Readers' Discipline

Tooltip

Physics and Astronomy 23

64%

Materials Science 10

28%

Engineering 2

6%

Biochemistry, Genetics and Molecular Bi... 1

3%

Save time finding and organizing research with Mendeley

Sign up for free