Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory

Abstract

(Graph Presented). A 3D highdensity switching device is realized utilizing titanium oxide, which is the most optimum material, but which is not practically demonstrated yet. The 1S1R (one ReRAM with the developed switching device) exhibits memory characteristics with a significantly suppressed sneak current, which can be used to realize highdensity ReRAM applications.